High-Performance 3D-Stacked Memory Interface for 2.5D & 3D Development
Deep-I HBM I/F solutions for High-Bandwidth Memory (HBM) is leading the way with high-performance 3D-stacked memory system for 2.5D or 3D development. Deep-I HBM I/F solutions provide Si-proven I/F portfolio comprised of memory controller interface, memory interface, mixed-signal (analog/digital) and full system implementation.
Providing a Complete I/F Solution for next-generation HBM5E or HBM4E.
Analyzed, designed and verified for AI-powered and High-performance computing (HPC) systems.
Next-generation HBM4E memory controller supporting data rates beyond 12.8 Gb/s per data I/O pin with multiple standalone I/F channels (8, 16, 32 memory channels).
Controller IPHigh-performance HBM3E controller IP supporting 8.4 Gb/s per I/O pin, optimized for AI accelerators and data-center GPU/NPU applications.
Controller IPHBM PHY interface designed for 2.5D systems with through-glass via (TGV) or pseudo through-silicon-via (TSV) interposer for highest data throughput.
PHY & InterposerFully optimized and verified by Silicon with 2μm, 5μm, 10μm RDL designs and advanced packaging solutions for 2.5D and 3D integration.
Package SolutionComplete 2.5D/3D HBM interface from logic die to 3D-stacked DRAM
Si-proven, highest performance HBM interface for AI and HPC
Real Silicon verified and design key reports available. Complete design solutions with post-layout timing, all I/O, and decoupling capacitors.
Beyond HBM4E (>12.8 Gb/s per data I/O pin), HBM3E (8.4 Gb/s), and HBM2E (3.6 Gb/s) speed for best SI/PI (signal/power) integrity.
Optimized for AI-powered and big data-intensive applications requiring ultra-low latency memory access with minimal overhead.
Advanced memory controller architecture and full HBM I/F solution
Low power logic control (DVFS, clock gating) and advanced low power on-chip training modes for energy-efficient operation.
Full Si-proven with memory controller, I/F interposer, and advanced package. Includes memory BIST feature and loop-back function.
Complete design solutions with post-layout timing, all I/O, and decoupling capacitors. Access to Deep-I SI/PI team for on-time-to-market support.
Si-proven HBM memory controller, PHY interface, and advanced 2.5D/3D packaging solutions.
Next-generation HBM4E memory controller IP supporting data rates beyond 12.8 Gb/s per data I/O pin, providing multiple standalone I/F channels for a total memory I/F of 1024 ~ 2048 bits.
High-performance HBM3E controller IP analyzed, designed and verified for AI-powered and high-performance computing systems with 8.4 Gb/s per I/O pin speed.
HBM PHY interface designed for 2.5D system with through-glass via (TGV) or pseudo through-silicon-via (TSV) interposer. Fully optimized with 2μm, 5μm, 10μm RDL designs.
Compare key specifications across our HBM I/F portfolio
Key specifications at a glance
Deep-I HBM I/F is analyzed, designed and verified by real Silicon for on-time-to-market implementation.
JEDEC HBM specification analysis. Define channel count, data-rate targets, and 2.5D/3D stacking topology for controller and PHY.
Advanced memory controller architecture design maximizing data-throughput. Reliable device initialization and on-chip digital calibration/training with BIST and loop-back function.
2.5D interposer design with TGV or pseudo-TSV. Best-quality optimization of RDL routing (2μm, 5μm, 10μm) for better SI/PI performance.
Full Si-proven verification with memory controller, I/F interposer, and advanced package. Complete characterization with post-layout timing, all I/O, and decoupling capacitors.
From concept to real-Silicon HBM integration — see Deep-I's HBM I/F solutions in action.
Contact our technical team to discuss your requirements and discover how Deep-I's HBM I/F solutions can accelerate your AI and HPC development timeline. Access to Deep-I SI/PI team to support your valuable designs for on-time-to-market implementation.